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PISCATAWAY, N.J., Dec. 11, 2025 /PRNewswire/ -- IEEE, the world's largest technical professional organization dedicated to advancing technology for humanity, proudly announces the recipients of its prestigious 2026 IEEE Medals. These global honors recognize individuals whose transformative innovations, scientific breakthroughs, and creative leadership are propelling technology forward for the benefit of humanity. This year's recipients embody the spirit of innovation and engineering leadership that drives progress across major fields of technology, impacting millions of people around the world. Their work has strengthened critical infrastructure, expanded human understanding, advanced healthcare, enabled new forms of communication, and improved the quality of life worldwide. Together, they represent a diverse community of pioneers whose contributions are shaping a more connected, sustainable, and equitable future. "Each year, the IEEE Medals celebrate those whose work has not only fundamentally advanced technology but also improved the human condition," said Kathleen Kramer, 2025 IEEE President and CEO. "The 2026 honorees exemplify the ingenuity, scientific excellence, and global impact that define our organization and inspire the next generation. Their contributions, from breakthroughs in computing and communications to life-changing innovations in healthcare, sustainability, and education, continue to shape a better and more connected world." IEEE Medal Recipients for 2026 include: IEEE FRANCES E. ALLEN MEDALSponsored by IBMIEEE Member Luis von Ahn — DuolingoLuis von Ahn is recognized for inventing CAPTCHA and reCAPTCHA, pioneering human computation research, and founding Duolingo. His work has secured global internet infrastructure, digitized millions of books, and expanded access to free education for learners worldwide. IEEE ALEXANDER GRAHAM BELL MEDAL Sponsored by Nokia Bell LabsIEEE Life Fellow Scott J. Shenker — UC BerkeleyHonored for groundbreaking research in computer networks and internet architecture, Shenker's work underpins today's cloud computing, the design of modern data centers, and the ability to control network devices through software. IEEE JAGADISH CHANDRA BOSE MEDAL IN WIRELESS COMMUNICATIONSSponsored by Mani L. BhaumikIEEE Member Erik Dahlman, IEEE Fellow Stefan Parkvall, IEEE Sr. Member Johan Sköld — EricssonCelebrated for their leadership in developing LTE (4G) and 5G standards, enabling global mobile broadband and powering modern communications, commerce, and IoT. IEEE MILDRED DRESSELHAUS MEDALSponsored by Google, LLCIEEE Fellow Karen Ann Panetta — Tufts UniversityRecognized for contributions to image processing and advocacy for women in engineering through the Nerd Girls program, Panetta has advanced technologies used in areas such as medical imaging and autonomous systems while expanding STEM pathways for girls and women globally. IEEE EDISON MEDALSponsored by the Edison Medal FundIEEE Fellow Eric A. Swanson — MITSwanson co-invented optical coherence tomography (OCT), a non-invasive, high-resolution imaging technology that revolutionized how clinicians diagnose and manage major eye diseases such as glaucoma, diabetic retinopathy, and age-related vision loss. IEEE MEDAL FOR ENVIRONMENTAL AND SAFETY TECHNOLOGIESSponsored by Toyota Motor CorporationIEEE Life Fellow Wei-Jen Lee — University of TexasHonored for leadership in electric power systems and renewable integration, Lee's work strengthens grid reliability and supports clean energy adoption, helping utilities manage renewable power sources and reduce the risk of large-scale outages. IEEE FOUNDERS MedalSponsored by the IEEE FoundationMarian R. Croak — GoogleCroak pioneered VoIP technologies and mobile donation platforms, shaping global communication and humanitarian aid systems. Her leadership continues to influence responsible AI development. IEEE RICHARD W. HAMMING MEDALSponsored by Qualcomm, Inc.IEEE Fellow Muriel Médard — MITRecognized for breakthroughs in network coding and information theory, Médard's innovations improve the reliability of data transmission in applications such as streaming video, wireless networks, and satellite communications. IEEE MEDAL FOR INNOVATIONS IN HEALTHCARE TECHNOLOGYSponsored by the IEEE Engineering in Medicine and Biology Society (EMBS)IEEE Fellow Rosalind W. Picard — MITPicard founded affective computing and developed wearable technologies for emotion and health monitoring, enabling tools used in mental health care, stress detection, and personalized health insights. IEEE NICK HOLONYAK, JR. MEDAL FOR SEMICONDUCTOR OPTOELECTRONIC TECHNOLOGIESSponsored by Friends of Nick Holonyak, Jr.IEEE Fellow Steven P. DenBaars — UC Santa BarbaraDenBaars is honored for pioneering gallium nitride semiconductors and LED technologies that enable the bright, energy-efficient lighting used in homes, smartphones, automotive headlights, and large-scale displays. IEEE JACK S. KILBY MEDALSponsored by AppleIEEE Life Fellow Biing-Hwang "Fred" Juang — Georgia TechJuang's foundational work in speech coding and recognition made possible the voice-driven technologies used in smartphones, customer service systems, and virtual assistants. IEEE/RSE JAMES CLERK MAXWELL MEDALSponsored by ARM, Ltd.Paul B. Corkum — University of OttawaCorkum's pioneering research in attosecond physics opened new frontiers in ultrafast science, enabling tools used to observe chemical reactions and electron motion at unprecedented speeds. IEEE JAMES H. MULLIGAN, JR. EDUCATION MEDALSponsored by the IEEE Life Members Fund and MathWorksIEEE Life Fellow James H. McClellan — EPFLMcClellan is recognized for decades of leadership in digital signal processing theory, shaping technologies used in audio processing, medical ultrasound, and radar systems. IEEE JUN-ICHI NISHIZAWA MEDALSponsored by the IEEE Jun-ichi Nishizawa Medal FundIEEE Life Fellow Eric R. Fossum — DartmouthInventor of the CMOS image sensor, Fossum revolutionized digital photography and video, shaping modern visual communication. IEEE ROBERT N. NOYCE MEDALSponsored by Intel CorporationChris Malachowsky — NVIDIAMalachowsky co-founded NVIDIA and drove GPU innovation, powering AI, gaming, and accelerated computing worldwide. IEEE DENNIS J. PICARD MEDAL RADAR TECHNOLOGIES AND APPLICATIONSSponsored by RTXIEEE Life Fellow Yoshio Yamaguchi — Niigata UniversityHonored for pioneering radar polarimetry and remote sensing, Yamaguchi's work supports climate monitoring and disaster response globally. IEEE MEDAL IN POWER ENGINEERINGSponsored by the IEEE Industry Applications, Industrial Electronics, Power Electronics, and Power & Energy SocietiesIEEE Fellow Fang Zheng Peng — University of PittsburghPeng's innovations in power conversion technology, notably his invention of the quasi Z-source inverter, have created more efficient, stable, and reliable means of harnessing renewable energy. IEEE SIMON RAMO MEDALSponsored by Northrop Grumman CorporationIEEE Fellow Michael Douglas Griffin — LogiQ, Inc.Griffin, former NASA Administrator, is recognized for shaping U.S. space exploration strategy and advancing aerospace engineering, including programs that laid the groundwork for today's crewed spaceflight and deep-space missions. IEEE JOHN VON NEUMANN MEDALSponsored by IBMIEEE Fellow Donald D. Chamberlin — IBMCo-inventor of SQL and a major contributor to database languages and systems, Chamberlin's work underpins nearly all corporate, financial, healthcare, and governmental data systems worldwide. Award recipients will be honored at IEEE's annual Honors Ceremony on 24 April 2026 in New York City. The 2026 IEEE Medal of Honor Laureate will be announced in January 2026. Stay tuned for more details. To see the full list of 2026 Recipients, please visit the IEEE Awards Website. About IEEE AwardsFor over a century, the IEEE Awards Program has remained the world's premier peer-recognition program, honoring preeminent leaders whose contributions have significantly advanced engineering, science, and technology. Through this program, IEEE recognizes the transformative innovations and societal impact achieved by its global community of experts across fields ranging from computing and telecommunications to energy, aerospace, materials science, and healthcare. About IEEEIEEE is the world's largest technical professional organization and is a public charity dedicated to advancing technology for the benefit of humanity. Through its highly cited publications, conferences, technology standards, and professional and educational activities, IEEE is the trusted voice on a wide variety of areas ranging from aerospace systems, computers and telecommunications to biomedical engineering, electric power, and consumer electronics. Learn more at https://www.ieee.org.
NESS ZIONA, Israel, Dec. 10, 2025 /PRNewswire/ -- VisIC Technologies Ltd., a pioneer in Gallium Nitride (GaN) power semiconductors for electric mobility, today announced the successful second closing of its Round B funding, securing $26 million. The round was led by a global semiconductor leader, with HKMC joining as a strategic investor. This milestone reinforces VisIC's position at the forefront of GaN innovation for EV traction inverters and strengthens its role in enabling next-generation electric mobility. The lead investor's focus on advancing critical semiconductor technologies complements VisIC's proprietary D³GaN™ platform, designed to deliver unmatched efficiency, scalability, and reliability for automotive drivetrains. HKMC's participation underscores its commitment to integrating GaN technology into mass-production EV platforms. The global EV market is experiencing rapid growth, with automakers racing to improve driving range, reduce costs, and meet stricter sustainability targets. A critical bottleneck lies in the efficiency and scalability of power electronics, particularly traction inverters, which directly impact vehicle performance and energy consumption. Problem StatementTraditional silicon-based solutions struggle to deliver the efficiency and power density required for next-generation EV platforms, especially at higher voltages. While SiC (Silicon Carbide) devices offer improved performance, their high cost and complex manufacturing limit widespread adoption. VisIC's GaN-based D³GaN™ technology addresses these limitations by enabling smaller, lighter, and more efficient inverters—unlocking new possibilities for both 400V and 800V architectures. Use of FundsThe new capital will accelerate VisIC's roadmap, including: Optimization, qualification, and release of Gen3 750V GaN dice and power modules. Development of Gen4 1350V GaN technology, supporting the full spectrum of EV designs. Stabilization of the supply chain and ramp-up of GaN product delivery for EV traction inverters. Expansion into emerging 800V data center power requirements, leveraging the same advanced GaN platform. Executive QuotesTamara Baksht, CEO of VisIC Technologies:"This investment marks a major milestone for VisIC and the global EV industry. Our D³GaN technology is redefining power electronics for electric vehicles, and the support of our strategic partners accelerates our mission to deliver high-efficiency, scalable solutions for the next generation of mobility." Hyundai Motor Company and Kia:"Hyundai Motor Company and Kia are committed to advancing sustainable mobility. Partnering with VisIC enables us to integrate cutting-edge GaN power technologies into our EV platforms, enhancing efficiency, reliability, and performance as we shape the future of electric transportation." Contact: Dieter Liesabethsdieter@visic-tech.com
NESS ZIONA, Israel, Dec. 10, 2025 /PRNewswire/ -- VisIC Technologies Ltd., a pioneer in Gallium Nitride (GaN) power semiconductors for electric mobility, today announced the successful second closing of its Round B funding, securing $26 million. The round was led by a global semiconductor leader, with HKMC joining as a strategic investor. This milestone reinforces VisIC's position at the forefront of GaN innovation for EV traction inverters and strengthens its role in enabling next-generation electric mobility. The lead investor's focus on advancing critical semiconductor technologies complements VisIC's proprietary D³GaN™ platform, designed to deliver unmatched efficiency, scalability, and reliability for automotive drivetrains. HKMC's participation underscores its commitment to integrating GaN technology into mass-production EV platforms. The global EV market is experiencing rapid growth, with automakers racing to improve driving range, reduce costs, and meet stricter sustainability targets. A critical bottleneck lies in the efficiency and scalability of power electronics, particularly traction inverters, which directly impact vehicle performance and energy consumption. Problem StatementTraditional silicon-based solutions struggle to deliver the efficiency and power density required for next-generation EV platforms, especially at higher voltages. While SiC (Silicon Carbide) devices offer improved performance, their high cost and complex manufacturing limit widespread adoption. VisIC's GaN-based D³GaN™ technology addresses these limitations by enabling smaller, lighter, and more efficient inverters—unlocking new possibilities for both 400V and 800V architectures. Use of FundsThe new capital will accelerate VisIC's roadmap, including: Optimization, qualification, and release of Gen3 750V GaN dice and power modules. Development of Gen4 1350V GaN technology, supporting the full spectrum of EV designs. Stabilization of the supply chain and ramp-up of GaN product delivery for EV traction inverters. Expansion into emerging 800V data center power requirements, leveraging the same advanced GaN platform. Executive QuotesTamara Baksht, CEO of VisIC Technologies:"This investment marks a major milestone for VisIC and the global EV industry. Our D³GaN technology is redefining power electronics for electric vehicles, and the support of our strategic partners accelerates our mission to deliver high-efficiency, scalable solutions for the next generation of mobility." Hyundai Motor Company and Kia:"Hyundai Motor Company and Kia are committed to advancing sustainable mobility. Partnering with VisIC enables us to integrate cutting-edge GaN power technologies into our EV platforms, enhancing efficiency, reliability, and performance as we shape the future of electric transportation." Contact: Dieter Liesabethsdieter@visic-tech.com Logo: https://mma.prnasia.com/media2/1134462/VisIC_Technologies_Logo.jpg?p=medium600
TORRANCE, Calif. and HYDERABAD, India, Dec. 8, 2025 /PRNewswire/ -- Navitas Semiconductor Corporation (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors and Cyient Semiconductors Private Limited, a fast-growing provider of ASIC, ASSP and power solutions provider have announced a strategic long-term partnership intended to advance the adoption of GaN technology in India and establish a complete, end-to-end GaN ecosystem. Through this partnership, Navitas Semiconductor and Cyient Semiconductors intend to co-develop GaN products, digital and mixed signal ICs, GaN based system modules and design enablement platforms targeting India's high voltage, high power market segments such as AI data centers, electric mobility, performance computing, energy grid infrastructure and industrial electrification. The partnership seeks to build a robust local supply chain and manufacturing ecosystem in support of the Indian Government's "Make in India" initiative. In addition, through this partnership Navitas and Cyient Semiconductor aims to deploy IC technology in accelerating solution development for high voltage and high-power markets. This is expected to include products based on Navitas' existing GaN technologies, along with new products tailored for India's unique market needs. Cyient Semiconductors' work in establishing a secure local supply chain and ecosystem for GaN products in India will further accelerate time to market for developers and OEMs across the region. Suman Narayan, CEO, Cyient Semiconductors, said, "This partnership represents a pivotal step in India's semiconductor future in solving the complexities of power delivery at high voltages. By combining Navitas' proven GaN technology with Cyient Semi's design, manufacturing, and supply-chain strengths, we're creating a self-sustaining ecosystem that will accelerate the market adoption of GaN. Our goal is to make GaN accessible to every OEM looking to design, build, and scale from India." "I believe the growth of GaN technology in India will exceed global trends, and Cyient Semiconductors is the perfect partner for Navitas to drive this revolution," said Chris Allexandre, President and CEO of Navitas. "Together, Navitas and Cyient will power India's vision of India for India – innovation, by India, for the world." This initiative is intended to empower Indian design houses and OEMs with locally sourced GaN components and manufacturing support, enabling faster development cycles and reducing barriers to GaN adoption in India. It also reinforces Cyient Semiconductors' ambition to driving semiconductor innovation, localization, and scalability across critical technology sectors. This collaboration between Cyient Semiconductors and Navitas establishes a direct channel for Indian customers to access GaN technology, along with reliable procurement, engineering collaboration and technical support. For more information on the partnership and products please visit https://navitassemi.com/ or cyinetsemi.com/GaN. About Navitas Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices, and high-voltage silicon carbide (SiC) technology, driving innovation across AI data centers, performance computing, energy and grid infrastructure, and industrial electrification. With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. Navitas has over 300 patents issued or pending and is the world's first semiconductor company to be CarbonNeutral®-certified. Navitas Semiconductor, GaNFast, GaNSense, GaNSafe, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited or affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners. About Cyient Semiconductors Cyient Semiconductors is a Hyderabad-headquartered provider of custom ASIC/ASSP solutions, with a focus on analog mixed-signal, intelligent power, and advanced semiconductor platforms. With design centers in India, Belgium, and the U.S., Cyient Semiconductors enables global customers in data centers, robotics, automotive, and industrial automation to achieve higher efficiency and faster time-to-market. Cautionary Statement Regarding Forward-Looking StatementsThis press release includes "forward-looking statements" within the meaning of Section 21E of the Securities Exchange Act of 1934, as amended. Forward-looking statements are attempts to predict or indicate future events or trends or similar statements that are not a reflection of historical fact. Forward-looking statements may be identified by the use of words such as "we expect" or "are expected to be," "estimate," "plan," "project," "forecast," "intend," "anticipate," "believe," "seek," or other similar expressions. Forward-looking statements are made based on estimates and forecasts of financial and performance metrics, projections of market opportunity and market share and current indications of customer interest, all of which are based on various assumptions, whether or not identified in this press release. All such statements are based on current expectations of the management of Navitas and Cyient and are not predictions of actual future performance. Forward-looking statements are provided for illustrative purposes only and are not intended to serve as, and must not be relied on by any investor as, a guarantee, an assurance, a prediction or a definitive statement of fact or probability. Actual events and circumstances are difficult or impossible to predict and will differ from assumptions and expectations. Many actual events and circumstances that affect performance are beyond the control of Navitas and/or Cyient, and forward-looking statements are subject to a number of uncertainties. Our businesses are subject to certain risks that could materially and adversely affect our respective business, financial condition, results of operations, or the value of our securities. For Navitas, these and other risk factors are discussed in the Risk Factors section beginning on p. 15 of our annual report on Form 10-K for the year ended December 31, 2024, as updated in the Risk Factors section of our most recent quarterly report on Form 10-Q, and in other documents we file with the SEC. If any of these risks, as discussed in more detail in our SEC reports, materialize or if our assumptions underlying forward-looking statements prove to be incorrect, actual results could differ materially from the results implied by these forward-looking statements. Navitas Contact Information Vipin Bothra info@navitassemi.com Navitas Investor ContactsLeanne Sievers | Brett PerryShelton Groupsheltonir@sheltongroup.com Cyient Semiconductors ContactPhalguna Hari jandhyala phalguna.harijandhyala@cyient.com
The Commission's final determination could lead to an import ban of Innoscience's allegedly infringing products into the U.S. The ruling is another positive decision which underscores the value of Infineon's industry leading patent portfolio GaN plays a pivotal role in enabling high-performance and energy-efficient power systems MUNICH, Dec. 3, 2025 /PRNewswire/ -- The U.S. International Trade Commission (ITC) found the violation of one patent owned by Infineon Technologies AG (FSE: IFX) (OTCQX: IFNNY) concerning gallium nitride (GaN) technology by Innoscience.[1] In addition, in this preliminary decision, the ITC confirmed that both patents asserted by Infineon in the proceedings before the ITC are legally valid.[2] The case centers on the unauthorized use of Infineon's patented GaN technologies by Innoscience. The Commission's final determination is expected to be issued on April 2, 2026. If this preliminary decision will be confirmed, it will lead to an import ban of Innoscience's allegedly infringing products into the United States of America. "This ruling is another testament to the strength of Infineon's intellectual property and confirms our commitment to vigorously defend our patent portfolio against infringements and ensuring fair competition in the market," says Dr. Johannes Schoiswohl, Senior Vice President and Head of Infineon's GaN Systems Business Line. "We remain dedicated to fostering innovation and advancing semiconductor technology to address the world's most pressing challenges, from decarbonization to digital transformation." The ruling is yet another positive decision which underscores the value of Infineon's contributions to GaN technology. In a parallel dispute in Germany, the German patent office recently confirmed the validity of a patent of Infineon and upheld it in slightly amended form. Infineon is asserting infringement of this patent in the Munich District Court.[3] Already in August 2025, the Munich District Court I (Landgericht München I) found infringement of another Infineon patent by Innoscience.[4] Infineon is a leading integrated device manufacturer (IDM) in the GaN market with the industry's broadest IP portfolio, comprising approximately 450 GaN patent families. With higher power density, faster switching speeds, and lower power losses, GaN semiconductors enable smaller designs, reducing energy consumption and heat generation. As a leader in power systems, Infineon is mastering all three relevant materials: silicon (Si), silicon carbide (SiC) and gallium nitride. Press Contact: Andre Tauber, andre.tauber@infineon.com, Tel. +49 89 343 6705 [1] US 9,899,481[2] US 9,899,481 and US 9,070,755[3] DE102017100947[4] DE102014113465
A12 藝術空間
gallium nitride
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